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BC850CE6359HTMA1 Технические параметры

Infineon Technologies  BC850CE6359HTMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Collector-Emitter Breakdown Voltage 45V
Current-Collector (Ic) (Max) 100mA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Last Time Buy
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 330mW
Power - Max 330mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 600mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Frequency - Transition 250MHz
RoHS Status ROHS3 Compliant

BC850CE6359HTMA1 Документы

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