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BC850CWE6327HTSA1 Технические параметры

Infineon Technologies  BC850CWE6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 45V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature LOW NOISE
Max Power Dissipation 250mW
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BC850
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Configuration SINGLE
Power - Max 250mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 600mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Transition Frequency 250MHz
Frequency - Transition 250MHz
RoHS Status RoHS Compliant
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BC850CWE6327HTSA1 Документы

BC850CWE6327HTSA1 brand manufacturers: Infineon Technologies, Anli stock, BC850CWE6327HTSA1 reference price.Infineon Technologies. BC850CWE6327HTSA1 parameters, BC850CWE6327HTSA1 Datasheet PDF and pin diagram description download.You can use the BC850CWE6327HTSA1 Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BC850CWE6327HTSA1 pin diagram and circuit diagram and usage method of function,BC850CWE6327HTSA1 electronics tutorials.You can download from the Anli.