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BC857BL3E6327XTMA1 Технические параметры

Infineon Technologies  BC857BL3E6327XTMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 45V
Current-Collector (Ic) (Max) 100mA
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e4
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature LOW NOISE
Voltage - Rated DC -45V
Max Power Dissipation 250mW
Terminal Position BOTTOM
Свойство продукта Значение свойства
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -100mA
Frequency 250MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE
Power Dissipation 250mW
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Transition Frequency 250MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BC857BL3E6327XTMA1 Документы

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