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BC858BL3E6327 Технические параметры

Infineon Technologies  BC858BL3E6327 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 30V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 250mW
Reach Compliance Code unknown
Свойство продукта Значение свойства
Frequency 250MHz
Base Part Number BC858
Element Configuration Single
Power Dissipation 250mW
Gain Bandwidth Product 250MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V
RoHS Status RoHS Compliant
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BC858BL3E6327 Документы

BC858BL3E6327 brand manufacturers: Infineon Technologies, Anli stock, BC858BL3E6327 reference price.Infineon Technologies. BC858BL3E6327 parameters, BC858BL3E6327 Datasheet PDF and pin diagram description download.You can use the BC858BL3E6327 Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BC858BL3E6327 pin diagram and circuit diagram and usage method of function,BC858BL3E6327 electronics tutorials.You can download from the Anli.