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BC858BWH6327XTSA1 Технические параметры

Infineon Technologies  BC858BWH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Factory Lead Time 6 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 30V
Current-Collector (Ic) (Max) 100mA
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature LOW NOISE
Max Power Dissipation 250mW
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 250MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BC858
Configuration SINGLE
Power Dissipation 250mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 650mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Transition Frequency 250MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BC858BWH6327XTSA1 Документы

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