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BCM846SE6327HTSA1 Технические параметры

Infineon Technologies  BCM846SE6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 65V
Number of Elements 2 Elements
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Max Power Dissipation 250mW
Свойство продукта Значение свойства
Terminal Form GULL WING
JESD-30 Code R-PDSO-G6
Configuration SEPARATE, 2 ELEMENTS
Power - Max 250mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 650mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Transition Frequency 250MHz
Frequency - Transition 250MHz
RoHS Status RoHS Compliant

BCM846SE6327HTSA1 Документы

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