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Infineon Technologies BCM856SH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - Bipolar (BJT) - Arrays | |
Марка | ||
Factory Lead Time | 4 Weeks | |
Contact Plating | Tin | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | 6-VSSOP, SC-88, SOT-363 | |
Number of Pins | 6Pins | |
Transistor Element Material | SILICON | |
Collector-Emitter Breakdown Voltage | 65V | |
Number of Elements | 2 Elements | |
Operating Temperature | 150°C TJ | |
Packaging | Tape & Reel (TR) | |
Published | 2006 | |
Part Status | Last Time Buy | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 6Terminations | |
ECCN Code | EAR99 | |
Max Power Dissipation | 250mW | |
Terminal Form | GULL WING | |
Frequency | 250MHz |
Свойство продукта | Значение свойства | |
---|---|---|
Base Part Number | BCM856S | |
Polarity | PNP | |
Power Dissipation | 250mW | |
Transistor Application | AMPLIFIER | |
Halogen Free | Halogen Free | |
Transistor Type | 2 PNP (Dual) | |
Collector Emitter Voltage (VCEO) | 5V | |
Max Collector Current | 100mA | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA 5V | |
Current - Collector Cutoff (Max) | 15nA ICBO | |
Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA | |
Transition Frequency | 250MHz | |
Max Breakdown Voltage | 65V | |
Collector Base Voltage (VCBO) | 80V | |
Emitter Base Voltage (VEBO) | 5V | |
Height | 800μm | |
Length | 2mm | |
Width | 1.25mm | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |