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BCM856SH6327XTSA1 Технические параметры

Infineon Technologies  BCM856SH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 65V
Number of Elements 2 Elements
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Max Power Dissipation 250mW
Terminal Form GULL WING
Frequency 250MHz
Свойство продукта Значение свойства
Base Part Number BCM856S
Polarity PNP
Power Dissipation 250mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 5V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Transition Frequency 250MHz
Max Breakdown Voltage 65V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Height 800μm
Length 2mm
Width 1.25mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BCM856SH6327XTSA1 Документы

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