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BCR08PNE6327BTSA1 Технические параметры

Infineon Technologies  BCR08PNE6327BTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Number of Pins 6Pins
Collector-Emitter Breakdown Voltage 50V
Packaging Tape & Reel (TR)
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Свойство продукта Значение свойства
Max Power Dissipation 250mW
Base Part Number BCR08PN
Element Configuration Dual
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Max Breakdown Voltage 50V
Frequency - Transition 170MHz
Resistor - Base (R1) 2.2k Ω
Resistor - Emitter Base (R2) 47k Ω
RoHS Status RoHS Compliant
Просмотр сходства

BCR08PNE6327BTSA1 Документы

BCR08PNE6327BTSA1 brand manufacturers: Infineon Technologies, Anli stock, BCR08PNE6327BTSA1 reference price.Infineon Technologies. BCR08PNE6327BTSA1 parameters, BCR08PNE6327BTSA1 Datasheet PDF and pin diagram description download.You can use the BCR08PNE6327BTSA1 Transistors - Bipolar (BJT) - Arrays, Pre-Biased, DSP Datesheet PDF, find BCR08PNE6327BTSA1 pin diagram and circuit diagram and usage method of function,BCR08PNE6327BTSA1 electronics tutorials.You can download from the Anli.