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BCR08PNH6327XTSA1 Технические параметры

Infineon Technologies  BCR08PNH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Number of Pins 6Pins
Collector-Emitter Breakdown Voltage 50V
Number of Elements 2 Elements
hFEMin 70
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO 1
Max Power Dissipation 250mW
Terminal Form GULL WING
Свойство продукта Значение свойства
Base Part Number BCR08PN
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 250mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Transition Frequency 100MHz
Frequency - Transition 170MHz
Resistor - Base (R1) 2.2k Ω
Resistor - Emitter Base (R2) 47k Ω
Height 800μm
Length 2mm
Width 1.25mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BCR08PNH6327XTSA1 Документы

BCR08PNH6327XTSA1 brand manufacturers: Infineon Technologies, Anli stock, BCR08PNH6327XTSA1 reference price.Infineon Technologies. BCR08PNH6327XTSA1 parameters, BCR08PNH6327XTSA1 Datasheet PDF and pin diagram description download.You can use the BCR08PNH6327XTSA1 Transistors - Bipolar (BJT) - Arrays, Pre-Biased, DSP Datesheet PDF, find BCR08PNH6327XTSA1 pin diagram and circuit diagram and usage method of function,BCR08PNH6327XTSA1 electronics tutorials.You can download from the Anli.