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BCR10PNB6327XT Технические параметры

Infineon Technologies  BCR10PNB6327XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Supplier Device Package PG-SOT363-6
Collector-Emitter Breakdown Voltage 50V
Current-Collector (Ic) (Max) 100mA
Packaging Tape & Reel (TR)
Published 2011
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 250mW
Свойство продукта Значение свойства
Base Part Number BCR10PN
Power - Max 250mW
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Frequency - Transition 130MHz
Resistor - Base (R1) 10kOhms
Resistor - Emitter Base (R2) 10kOhms
RoHS Status ROHS3 Compliant
Просмотр сходства

BCR10PNB6327XT Документы

BCR10PNB6327XT brand manufacturers: Infineon Technologies, Anli stock, BCR10PNB6327XT reference price.Infineon Technologies. BCR10PNB6327XT parameters, BCR10PNB6327XT Datasheet PDF and pin diagram description download.You can use the BCR10PNB6327XT Transistors - Bipolar (BJT) - Arrays, Pre-Biased, DSP Datesheet PDF, find BCR10PNB6327XT pin diagram and circuit diagram and usage method of function,BCR10PNB6327XT electronics tutorials.You can download from the Anli.