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BCR 114L3 E6327 Технические параметры

Infineon Technologies  BCR 114L3 E6327 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100mA
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2003
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Reach Compliance Code unknown
Свойство продукта Значение свойства
Power - Max 250mW
Polarity/Channel Type NPN
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Frequency - Transition 160MHz
Power Dissipation-Max (Abs) 0.25W
Resistor - Base (R1) 4.7 k Ω
Resistor - Emitter Base (R2) 10 k Ω
RoHS Status ROHS3 Compliant
Просмотр сходства
BCR 114L3 E6327 brand manufacturers: Infineon Technologies, Anli stock, BCR 114L3 E6327 reference price.Infineon Technologies. BCR 114L3 E6327 parameters, BCR 114L3 E6327 Datasheet PDF and pin diagram description download.You can use the BCR 114L3 E6327 Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find BCR 114L3 E6327 pin diagram and circuit diagram and usage method of function,BCR 114L3 E6327 electronics tutorials.You can download from the Anli.