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BCR119SE6433HTMA1 Технические параметры

Infineon Technologies  BCR119SE6433HTMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Number of Elements 2 Elements
Packaging Tape & Reel (TR)
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Additional Feature BUILT-IN BIAS RESISTOR
Max Power Dissipation 250mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BCR119S
JESD-30 Code R-PDSO-G6
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max 250mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 5mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Transition Frequency 150MHz
Frequency - Transition 150MHz
Resistor - Base (R1) 4.7k Ω
RoHS Status RoHS Compliant
Просмотр сходства

BCR119SE6433HTMA1 Документы

BCR119SE6433HTMA1 brand manufacturers: Infineon Technologies, Anli stock, BCR119SE6433HTMA1 reference price.Infineon Technologies. BCR119SE6433HTMA1 parameters, BCR119SE6433HTMA1 Datasheet PDF and pin diagram description download.You can use the BCR119SE6433HTMA1 Transistors - Bipolar (BJT) - Arrays, Pre-Biased, DSP Datesheet PDF, find BCR119SE6433HTMA1 pin diagram and circuit diagram and usage method of function,BCR119SE6433HTMA1 electronics tutorials.You can download from the Anli.