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BCR 148W H6433 Технические параметры

Infineon Technologies  BCR 148W H6433 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100mA
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Terminal Position DUAL
Terminal Form GULL WING
Reach Compliance Code compliant
Свойство продукта Значение свойства
Base Part Number BCR148
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G3
Configuration SINGLE WITH BUILT-IN RESISTOR
Power - Max 250mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Transition Frequency 100MHz
Frequency - Transition 100MHz
Resistor - Base (R1) 47 k Ω
Resistor - Emitter Base (R2) 47 k Ω

BCR 148W H6433 Документы

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