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BCR158E6327HTSA1 Технические параметры

Infineon Technologies  BCR158E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Factory Lead Time 26 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Supplier Device Package SOT-23-3
Collector-Emitter Breakdown Voltage 50V
Current-Collector (Ic) (Max) 100mA
hFEMin 70
Packaging Tape & Reel (TR)
Published 2011
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Voltage - Rated DC -50V
Max Power Dissipation 200mW
Current Rating -100mA
Base Part Number BCR158
Свойство продукта Значение свойства
Polarity PNP
Element Configuration Single
Power - Max 200mW
Halogen Free Not Halogen Free
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 47 kOhms
Height 900μm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BCR158E6327HTSA1 Документы

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