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BCR166WE6327HTSA1 Технические параметры

Infineon Technologies  BCR166WE6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Number of Elements 1 Element
Operating Temperature (Max.) 150°C
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 10
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Base Part Number BCR166
JESD-30 Code R-PDSO-G3
Configuration SINGLE WITH BUILT-IN RESISTOR
Power - Max 250mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Transition Frequency 160MHz
Frequency - Transition 160MHz
Resistor - Base (R1) 4.7 k Ω
Resistor - Emitter Base (R2) 47 k Ω
RoHS Status RoHS Compliant
Просмотр сходства

BCR166WE6327HTSA1 Документы

BCR166WE6327HTSA1 brand manufacturers: Infineon Technologies, Anli stock, BCR166WE6327HTSA1 reference price.Infineon Technologies. BCR166WE6327HTSA1 parameters, BCR166WE6327HTSA1 Datasheet PDF and pin diagram description download.You can use the BCR166WE6327HTSA1 Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find BCR166WE6327HTSA1 pin diagram and circuit diagram and usage method of function,BCR166WE6327HTSA1 electronics tutorials.You can download from the Anli.