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BCR183SH6433XTMA1 Технические параметры

Infineon Technologies  BCR183SH6433XTMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Transistor Element Material SILICON
Number of Elements 2 Elements
Collector-Emitter Breakdown Voltage 50V
Packaging Tape & Reel (TR)
Published 2011
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Max Power Dissipation 250mW
Terminal Form GULL WING
Свойство продукта Значение свойства
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G6
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max 250mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type 2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Transition Frequency 200MHz
Frequency - Transition 200MHz
Resistor - Base (R1) 10k Ω
Resistor - Emitter Base (R2) 10k Ω
RoHS Status ROHS3 Compliant
Просмотр сходства

BCR183SH6433XTMA1 Документы

BCR183SH6433XTMA1 brand manufacturers: Infineon Technologies, Anli stock, BCR183SH6433XTMA1 reference price.Infineon Technologies. BCR183SH6433XTMA1 parameters, BCR183SH6433XTMA1 Datasheet PDF and pin diagram description download.You can use the BCR183SH6433XTMA1 Transistors - Bipolar (BJT) - Arrays, Pre-Biased, DSP Datesheet PDF, find BCR183SH6433XTMA1 pin diagram and circuit diagram and usage method of function,BCR183SH6433XTMA1 electronics tutorials.You can download from the Anli.