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BCR 183T E6327 Технические параметры

Infineon Technologies  BCR 183T E6327 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100mA
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2005
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BCR183
Свойство продукта Значение свойства
Power - Max 250mW
Polarity/Channel Type PNP
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Frequency - Transition 200MHz
Power Dissipation-Max (Abs) 0.25W
Resistor - Base (R1) 10 k Ω
Resistor - Emitter Base (R2) 10 k Ω
RoHS Status RoHS Compliant

BCR 183T E6327 Документы

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