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BCR185SH6327XTSA1 Технические параметры

Infineon Technologies  BCR185SH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Number of Pins 6Pins
Collector-Emitter Breakdown Voltage 50V
hFEMin 70
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 250mW
Polarity PNP
Свойство продукта Значение свойства
Element Configuration Dual
Power Dissipation 250mW
Halogen Free Halogen Free
Transistor Type 2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
Emitter Base Voltage (VEBO) 50V
Resistor - Base (R1) 10k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47k Ω
Height 800μm
Length 2mm
Width 1.25mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства
BCR185SH6327XTSA1 brand manufacturers: Infineon Technologies, Anli stock, BCR185SH6327XTSA1 reference price.Infineon Technologies. BCR185SH6327XTSA1 parameters, BCR185SH6327XTSA1 Datasheet PDF and pin diagram description download.You can use the BCR185SH6327XTSA1 Transistors - Bipolar (BJT) - Arrays, Pre-Biased, DSP Datesheet PDF, find BCR185SH6327XTSA1 pin diagram and circuit diagram and usage method of function,BCR185SH6327XTSA1 electronics tutorials.You can download from the Anli.