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BCR523UE6327HTSA1 Технические параметры

Infineon Technologies  BCR523UE6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка
Factory Lead Time 26 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6Pins
Collector-Emitter Breakdown Voltage 50V
Number of Elements 2 Elements
hFEMin 70
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 10
Voltage - Rated DC 50V
Свойство продукта Значение свойства
Max Power Dissipation 330mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 500mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
Qualification Status Not Qualified
Polarity NPN
Element Configuration Dual
Transistor Application SWITCHING
Halogen Free Not Halogen Free
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Transition Frequency 100MHz
Frequency - Transition 100MHz
Resistor - Base (R1) 1k Ω
Resistor - Emitter Base (R2) 10k Ω
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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