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BCR555E6433HTMA1 Технические параметры

Infineon Technologies  BCR555E6433HTMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 500mA
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2011
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Additional Feature BUILT-IN BIAS RESISTOR RATIO 0.22
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Base Part Number BCR555
JESD-30 Code R-PDSO-G3
Configuration SINGLE WITH BUILT-IN RESISTOR
Power - Max 330mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 50V
Transition Frequency 150MHz
Frequency - Transition 150MHz
Resistor - Base (R1) 2.2 k Ω
Resistor - Emitter Base (R2) 10 k Ω
RoHS Status ROHS3 Compliant
Просмотр сходства

BCR555E6433HTMA1 Документы

BCR555E6433HTMA1 brand manufacturers: Infineon Technologies, Anli stock, BCR555E6433HTMA1 reference price.Infineon Technologies. BCR555E6433HTMA1 parameters, BCR555E6433HTMA1 Datasheet PDF and pin diagram description download.You can use the BCR555E6433HTMA1 Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find BCR555E6433HTMA1 pin diagram and circuit diagram and usage method of function,BCR555E6433HTMA1 electronics tutorials.You can download from the Anli.