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BCV62BE6327HTSA1 Технические параметры

Infineon Technologies  BCV62BE6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-253-4, TO-253AA
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100mA
Number of Elements 2 Elements
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BCV62
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G4
Configuration CURRENT MIRROR
Power - Max 300mW
Polarity/Channel Type PNP
Transistor Type 2 PNP (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 30V
Transition Frequency 250MHz
Frequency - Transition 250MHz
RoHS Status ROHS3 Compliant

BCV62BE6327HTSA1 Документы

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