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BCV62CE6327HTSA1 Технические параметры

Infineon Technologies  BCV62CE6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-253-4, TO-253AA
Number of Pins 4Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 30V
Number of Elements 2 Elements
hFEMin 125
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Voltage - Rated DC -30V
Max Power Dissipation 300mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -100mA
Свойство продукта Значение свойства
Frequency 250MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BCV62
Reference Standard AEC-Q101
Polarity PNP
Element Configuration Dual
Power Dissipation 300mW
Halogen Free Not Halogen Free
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 650mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Transition Frequency 250MHz
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 6V
Height 1mm
Length 2.9mm
Width 2.9mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства
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