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BCX5516E6433HTMA1 Технические параметры

Infineon Technologies  BCX5516E6433HTMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 60V
Current-Collector (Ic) (Max) 1A
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Max Power Dissipation 2W
Terminal Position SINGLE
Terminal Form FLAT
Свойство продукта Значение свойства
Frequency 100MHz
Base Part Number BCX55
JESD-30 Code R-PSSO-F3
Configuration SINGLE
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status RoHS Compliant
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