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BCX55H6327XTSA1 Технические параметры

Infineon Technologies  BCX55H6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 60V
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2011
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Свойство продукта Значение свойства
Max Power Dissipation 2W
Element Configuration Single
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Max Frequency 100MHz
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Height 1.6mm
Length 4.5mm
Width 2.5mm
RoHS Status ROHS3 Compliant

BCX55H6327XTSA1 Документы

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