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BCX71GE6327HTSA1 Технические параметры

Infineon Technologies  BCX71GE6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Weight 30mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 45V
Number of Elements 1 Element
hFEMin 120
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC -45V
Max Power Dissipation 330mW
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -100mA
Frequency 250MHz
Base Part Number BCX71
Element Configuration Single
Power Dissipation 330mW
Transistor Application SWITCHING
Halogen Free Not Halogen Free
Gain Bandwidth Product 250MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 550mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 5V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 550mV @ 1.25mA, 50mA
Transition Frequency 250MHz
Collector Base Voltage (VCBO) -45V
Emitter Base Voltage (VEBO) -5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BCX71GE6327HTSA1 Документы

BCX71GE6327HTSA1 brand manufacturers: Infineon Technologies, Anli stock, BCX71GE6327HTSA1 reference price.Infineon Technologies. BCX71GE6327HTSA1 parameters, BCX71GE6327HTSA1 Datasheet PDF and pin diagram description download.You can use the BCX71GE6327HTSA1 Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BCX71GE6327HTSA1 pin diagram and circuit diagram and usage method of function,BCX71GE6327HTSA1 electronics tutorials.You can download from the Anli.