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Infineon Technologies BF1009SE6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Mount | Surface Mount | |
| Package / Case | TO-253-4, TO-253AA | |
| Number of Pins | 4Pins | |
| Number of Elements | 1 Element | |
| Voltage Rated | 12V | |
| Packaging | Tape & Reel (TR) | |
| Published | 2007 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Max Power Dissipation | 200mW | |
| Terminal Position | DUAL |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | GULL WING | |
| Current Rating | 25mA | |
| Frequency | 800MHz | |
| Configuration | SINGLE | |
| Operating Mode | DUAL GATE, DEPLETION MODE | |
| Case Connection | SOURCE | |
| Transistor Application | AMPLIFIER | |
| Transistor Type | N-Channel | |
| Continuous Drain Current (ID) | 25mA | |
| Gain | 22dB | |
| Drain Current-Max (Abs) (ID) | 0.025A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Noise Figure | 1.4dB | |
| Voltage - Test | 9V | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |