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BF2030-E6327 Технические параметры
Infineon Technologies BF2030-E6327 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Package / Case | TO-253-4, TO-253AA | |
| Surface Mount | YES | |
| Supplier Device Package | SOT143 (SC-61) | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | Infineon Technologies | |
| Package | Bulk | |
| Product Status | Active | |
| Voltage Rated | 8 V | |
| Package Description | SOT-143, 4 PIN | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | BF2030E6327 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Infineon Technologies AG | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Risk Rank | 7.87 | |
| Part Package Code | SOT-143 | |
| Drain Current-Max (ID) | 0.04 A | |
| Series | - | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Additional Feature | LOW NOISE | |
| Subcategory | FET General Purpose Power | |
| Current Rating (Amps) | - | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | unknown | |
| Frequency | 1GHz | |
| Pin Count | 4 | |
| JESD-30 Code | R-PDSO-G4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | DUAL GATE, DEPLETION MODE | |
| Case Connection | SOURCE | |
| Current - Test | 10 mA | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Type | N-Channel | |
| Gain | 23dB | |
| Drain Current-Max (Abs) (ID) | 0.04 A | |
| DS Breakdown Voltage-Min | 10 V | |
| Power - Output | - | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Noise Figure | 1.5dB @ 800MHz | |
| Voltage - Test | 5 V | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| Power Gain-Min (Gp) | 20 dB |
Индекс :
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