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BF771E6327HTSA1 Технические параметры

Infineon Technologies  BF771E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 12V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 12V
Max Power Dissipation 580mW
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 80mA
Frequency 8GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE
Power Dissipation 580mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 30mA 8V
Gain 10dB ~ 15dB
Transition Frequency 8000MHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 2V
Noise Figure (dB Typ @ f) 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BF771E6327HTSA1 Документы

BF771E6327HTSA1 brand manufacturers: Infineon Technologies, Anli stock, BF771E6327HTSA1 reference price.Infineon Technologies. BF771E6327HTSA1 parameters, BF771E6327HTSA1 Datasheet PDF and pin diagram description download.You can use the BF771E6327HTSA1 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BF771E6327HTSA1 pin diagram and circuit diagram and usage method of function,BF771E6327HTSA1 electronics tutorials.You can download from the Anli.