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BFN26E6433HTMA1 Технические параметры

Infineon Technologies  BFN26E6433HTMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 300V
Current-Collector (Ic) (Max) 200mA
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 360mW
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Frequency 70MHz
Base Part Number BFN26
Configuration SINGLE
Power Dissipation 360mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 30mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Transition Frequency 70MHz
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 6V
Radiation Hardening No
RoHS Status RoHS Compliant
Просмотр сходства

BFN26E6433HTMA1 Документы

BFN26E6433HTMA1 brand manufacturers: Infineon Technologies, Anli stock, BFN26E6433HTMA1 reference price.Infineon Technologies. BFN26E6433HTMA1 parameters, BFN26E6433HTMA1 Datasheet PDF and pin diagram description download.You can use the BFN26E6433HTMA1 Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BFN26E6433HTMA1 pin diagram and circuit diagram and usage method of function,BFN26E6433HTMA1 electronics tutorials.You can download from the Anli.