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BFP182RE7764HTSA1 Технические параметры

Infineon Technologies  BFP182RE7764HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-143R
Number of Pins 4Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 12V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Additional Feature LOW NOISE
Voltage - Rated DC 12V
Max Power Dissipation 250mW
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 35mA
Frequency 8GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFP182
Configuration SINGLE
Power Dissipation 250mW
Transistor Application AMPLIFIER
Halogen Free Not Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 35mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA 8V
Gain 22dB
Transition Frequency 8000MHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 2V
Noise Figure (dB Typ @ f) 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BFP182RE7764HTSA1 Документы

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