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BFP182WE6327HTSA1 Технические параметры

Infineon Technologies  BFP182WE6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Supplier Device Package PG-SOT343-4
Collector-Emitter Breakdown Voltage 12V
Current-Collector (Ic) (Max) 35mA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Max Power Dissipation 250mW
Base Part Number BFP182
Power - Max 250mW
Transistor Type NPN
Max Collector Current 35mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA 8V
Gain 22dB
Voltage - Collector Emitter Breakdown (Max) 12V
Max Breakdown Voltage 12V
Frequency - Transition 8GHz
Noise Figure (dB Typ @ f) 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
RoHS Status RoHS Compliant
Просмотр сходства

BFP182WE6327HTSA1 Документы

BFP182WE6327HTSA1 brand manufacturers: Infineon Technologies, Anli stock, BFP182WE6327HTSA1 reference price.Infineon Technologies. BFP182WE6327HTSA1 parameters, BFP182WE6327HTSA1 Datasheet PDF and pin diagram description download.You can use the BFP182WE6327HTSA1 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFP182WE6327HTSA1 pin diagram and circuit diagram and usage method of function,BFP182WE6327HTSA1 electronics tutorials.You can download from the Anli.