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BFP182WH6327XTSA1 Технические параметры

Infineon Technologies  BFP182WH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Number of Pins 4Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 12V
Number of Elements 1 Element
hFEMin 70
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Frequency 8GHz
Свойство продукта Значение свойства
Base Part Number BFP182
Element Configuration Single
Power Dissipation 250mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 35mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA 8V
Gain 22dB
Transition Frequency 8000MHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 2V
Continuous Collector Current 35mA
Collector-Base Capacitance-Max 0.5pF
Noise Figure (dB Typ @ f) 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Height 800μm
Length 2mm
Width 1.25mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BFP182WH6327XTSA1 Документы

BFP182WH6327XTSA1 brand manufacturers: Infineon Technologies, Anli stock, BFP182WH6327XTSA1 reference price.Infineon Technologies. BFP182WH6327XTSA1 parameters, BFP182WH6327XTSA1 Datasheet PDF and pin diagram description download.You can use the BFP182WH6327XTSA1 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFP182WH6327XTSA1 pin diagram and circuit diagram and usage method of function,BFP182WH6327XTSA1 electronics tutorials.You can download from the Anli.