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BFP183WH6327XTSA1 Технические параметры

Infineon Technologies  BFP183WH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Number of Pins 4Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 12V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Max Power Dissipation 450mW
Terminal Position DUAL
Terminal Form GULL WING
Frequency 8GHz
Свойство продукта Значение свойства
Base Part Number BFP183
Element Configuration Single
Power Dissipation 450mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 65mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 15mA 8V
Gain 22dB
Transition Frequency 8000MHz
Max Breakdown Voltage 12V
Frequency - Transition 8.5GHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 2V
Noise Figure (dB Typ @ f) 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Height 900μm
Length 2mm
Width 1.25mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BFP183WH6327XTSA1 Документы

BFP183WH6327XTSA1 brand manufacturers: Infineon Technologies, Anli stock, BFP183WH6327XTSA1 reference price.Infineon Technologies. BFP183WH6327XTSA1 parameters, BFP183WH6327XTSA1 Datasheet PDF and pin diagram description download.You can use the BFP183WH6327XTSA1 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFP183WH6327XTSA1 pin diagram and circuit diagram and usage method of function,BFP183WH6327XTSA1 electronics tutorials.You can download from the Anli.