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BFP196WH6740 Технические параметры

Infineon Technologies  BFP196WH6740 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Supplier Device Package PG-SOT343-4-1
Mfr Infineon Technologies
Package Bulk
Product Status Active
Current-Collector (Ic) (Max) 150mA
Collector-Emitter Breakdown Voltage 12 V
hFEMin 70
Number of Elements 1 Element
RoHS Non-Compliant
Series Automotive, AEC-Q101
Operating Temperature 150°C (TJ)
Max Operating Temperature 150 °C
Свойство продукта Значение свойства
Power Dissipation 700 mW
Power - Max 700mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12 V
Max Collector Current 150 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 8V
Gain 19dB
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 7.5GHz
Collector Base Voltage (VCBO) 20 V
Emitter Base Voltage (VEBO) 2 V
Max Junction Temperature (Tj) 150 °C
Ambient Temperature Range High 150 °C
Noise Figure (dB Typ @ f) 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Height 1 mm

BFP196WH6740 Документы

  • Datasheets
BFP196WH6740 brand manufacturers: Infineon Technologies, Anli stock, BFP196WH6740 reference price.Infineon Technologies. BFP196WH6740 parameters, BFP196WH6740 Datasheet PDF and pin diagram description download.You can use the BFP196WH6740 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFP196WH6740 pin diagram and circuit diagram and usage method of function,BFP196WH6740 electronics tutorials.You can download from the Anli.