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Infineon Technologies BFP196WH6740 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | SC-82A, SOT-343 | |
| Supplier Device Package | PG-SOT343-4-1 | |
| Mfr | Infineon Technologies | |
| Package | Bulk | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 150mA | |
| Collector-Emitter Breakdown Voltage | 12 V | |
| hFEMin | 70 | |
| Number of Elements | 1 Element | |
| RoHS | Non-Compliant | |
| Series | Automotive, AEC-Q101 | |
| Operating Temperature | 150°C (TJ) | |
| Max Operating Temperature | 150 °C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Power Dissipation | 700 mW | |
| Power - Max | 700mW | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 12 V | |
| Max Collector Current | 150 mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 8V | |
| Gain | 19dB | |
| Voltage - Collector Emitter Breakdown (Max) | 12V | |
| Frequency - Transition | 7.5GHz | |
| Collector Base Voltage (VCBO) | 20 V | |
| Emitter Base Voltage (VEBO) | 2 V | |
| Max Junction Temperature (Tj) | 150 °C | |
| Ambient Temperature Range High | 150 °C | |
| Noise Figure (dB Typ @ f) | 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz | |
| Height | 1 mm |