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BFP196WNH6327XTSA1 Технические параметры

Infineon Technologies  BFP196WNH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 150mA
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.21.00.75
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G4
Configuration SINGLE
Power - Max 700mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA 8V
Gain 9.7dB
Voltage - Collector Emitter Breakdown (Max) 12V
Transition Frequency 7500MHz
Frequency - Transition 7.5GHz
Highest Frequency Band S B
Noise Figure (dB Typ @ f) 1.3dB @ 900MHz
RoHS Status ROHS3 Compliant
Просмотр сходства

BFP196WNH6327XTSA1 Документы

BFP196WNH6327XTSA1 brand manufacturers: Infineon Technologies, Anli stock, BFP196WNH6327XTSA1 reference price.Infineon Technologies. BFP196WNH6327XTSA1 parameters, BFP196WNH6327XTSA1 Datasheet PDF and pin diagram description download.You can use the BFP196WNH6327XTSA1 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFP196WNH6327XTSA1 pin diagram and circuit diagram and usage method of function,BFP196WNH6327XTSA1 electronics tutorials.You can download from the Anli.