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BFP410H6327XTSA1 Технические параметры

Infineon Technologies  BFP410H6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Number of Pins 4Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 5V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
Configuration SINGLE
Power - Max 150mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4.5V
Max Collector Current 40mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 13mA 2V
Gain 21.5dB
Transition Frequency 25000MHz
Frequency - Transition 25GHz
Collector Base Voltage (VCBO) 13V
Highest Frequency Band L B
Collector-Base Capacitance-Max 0.17pF
Noise Figure (dB Typ @ f) 1.2dB @ 2GHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BFP410H6327XTSA1 Документы

BFP410H6327XTSA1 brand manufacturers: Infineon Technologies, Anli stock, BFP410H6327XTSA1 reference price.Infineon Technologies. BFP410H6327XTSA1 parameters, BFP410H6327XTSA1 Datasheet PDF and pin diagram description download.You can use the BFP410H6327XTSA1 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFP410H6327XTSA1 pin diagram and circuit diagram and usage method of function,BFP410H6327XTSA1 electronics tutorials.You can download from the Anli.