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BFP420E6327BTSA1 Технические параметры

Infineon Technologies  BFP420E6327BTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Number of Pins 4Pins
Collector-Emitter Breakdown Voltage 5V
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 160mW
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFP420
Power - Max 160mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4.5V
Max Collector Current 35mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 20mA 4V
Gain 21dB
Max Breakdown Voltage 5V
Frequency - Transition 25GHz
Collector Base Voltage (VCBO) 15V
Noise Figure (dB Typ @ f) 1.1dB @ 1.8GHz
RoHS Status RoHS Compliant

BFP420E6327BTSA1 Документы

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