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BFP420H6327XTSA1 Технические параметры

Infineon Technologies  BFP420H6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 6 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 5V
Current-Collector (Ic) (Max) 35mA
Number of Elements 1 Element
hFEMin 60
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 160mW
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Frequency 25GHz
Base Part Number BFP420
JESD-30 Code R-PDSO-G4
Configuration SINGLE
Test Frequency 1.8GHz
Power Dissipation 210mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 60mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 20mA 4V
Gain 21dB
Transition Frequency 25000MHz
Max Breakdown Voltage 5V
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 1.5V
Max Junction Temperature (Tj) 150°C
Noise Figure (dB Typ @ f) 1.1dB @ 1.8GHz
Height 1mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства
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