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BFP420H6801XTSA1 Технические параметры

Infineon Technologies  BFP420H6801XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Number of Pins 4Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 5V
Current-Collector (Ic) (Max) 35mA
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Additional Feature HIGH RELIABILITY, LOW NOISE
Max Power Dissipation 160mW
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 25GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFP420
Configuration SINGLE
Power Dissipation 160mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4.5V
Max Collector Current 35mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 20mA 4V
Gain 21dB
Transition Frequency 25000MHz
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 1.5V
Collector-Base Capacitance-Max 0.3pF
Noise Figure (dB Typ @ f) 1.1dB @ 1.8GHz
RoHS Status ROHS3 Compliant
Просмотр сходства
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