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BFP450E6327BTSA1 Технические параметры

Infineon Technologies  BFP450E6327BTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Number of Pins 4Pins
Supplier Device Package PG-SOT343-4
Collector-Emitter Breakdown Voltage 5V
Current-Collector (Ic) (Max) 100mA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Свойство продукта Значение свойства
Min Operating Temperature -55°C
Max Power Dissipation 450mW
Base Part Number BFP450
Power - Max 450mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4.5V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 50mA 4V
Gain 15.5dB
Voltage - Collector Emitter Breakdown (Max) 5V
Max Breakdown Voltage 5V
Frequency - Transition 24GHz
Collector Base Voltage (VCBO) 15V
Noise Figure (dB Typ @ f) 1.25dB @ 1.8GHz
RoHS Status RoHS Compliant
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BFP450E6327BTSA1 Документы

BFP450E6327BTSA1 brand manufacturers: Infineon Technologies, Anli stock, BFP450E6327BTSA1 reference price.Infineon Technologies. BFP450E6327BTSA1 parameters, BFP450E6327BTSA1 Datasheet PDF and pin diagram description download.You can use the BFP450E6327BTSA1 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFP450E6327BTSA1 pin diagram and circuit diagram and usage method of function,BFP450E6327BTSA1 electronics tutorials.You can download from the Anli.