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BFP460E6327HTSA1 Технические параметры

Infineon Technologies  BFP460E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Supplier Device Package PG-SOT343-4
Collector-Emitter Breakdown Voltage 5.8V
Current-Collector (Ic) (Max) 70mA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Max Power Dissipation 230mW
Base Part Number BFP460
Power - Max 230mW
Transistor Type NPN
Max Collector Current 70mA
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 20mA 3V
Gain 12.5dB ~ 26.5dB
Voltage - Collector Emitter Breakdown (Max) 5.8V
Max Breakdown Voltage 5.8V
Frequency - Transition 22GHz
Noise Figure (dB Typ @ f) 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
RoHS Status RoHS Compliant
Просмотр сходства
BFP460E6327HTSA1 brand manufacturers: Infineon Technologies, Anli stock, BFP460E6327HTSA1 reference price.Infineon Technologies. BFP460E6327HTSA1 parameters, BFP460E6327HTSA1 Datasheet PDF and pin diagram description download.You can use the BFP460E6327HTSA1 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFP460E6327HTSA1 pin diagram and circuit diagram and usage method of function,BFP460E6327HTSA1 electronics tutorials.You can download from the Anli.