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BFP 520F E6327 Технические параметры

Infineon Technologies  BFP 520F E6327 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mounting Type Surface Mount
Package / Case 4-SMD, Flat Leads
Surface Mount YES
Current-Collector (Ic) (Max) 40mA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Свойство продукта Значение свойства
Base Part Number BFP520
Configuration Single
Power - Max 100mW
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 20mA 2V
Gain 22.5dB
Voltage - Collector Emitter Breakdown (Max) 3.5V
Frequency - Transition 45GHz
Power Dissipation-Max (Abs) 0.1W
Noise Figure (dB Typ @ f) 0.95dB @ 1.8GHz
RoHS Status RoHS Compliant

BFP 520F E6327 Документы

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