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BFP540ESDH6327XTSA1 Технические параметры

Infineon Technologies  BFP540ESDH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Number of Pins 4Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 5V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Additional Feature HIGH RELIABILITY, LOW NOISE
Max Power Dissipation 250mW
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 30GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFP540
Configuration SINGLE
Power Dissipation 250mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4.5V
Max Collector Current 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA 3.5V
Gain 21.5dB
Transition Frequency 30000MHz
Max Breakdown Voltage 5V
Collector Base Voltage (VCBO) 10V
Emitter Base Voltage (VEBO) 1V
Noise Figure (dB Typ @ f) 0.9dB ~ 1.4dB @ 1.8GHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства
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