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BFP540FESDE6327 Технические параметры

Infineon Technologies  BFP540FESDE6327 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Package / Case 4-SMD, Flat Leads
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 4Pins
Collector-Emitter Breakdown Voltage 5V
Number of Elements 1 Element
Published 2010
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 250mW
Reach Compliance Code unknown
Frequency 30GHz
Свойство продукта Значение свойства
Base Part Number BFP540
Configuration Single
Power Dissipation 250mW
Gain Bandwidth Product 30 GHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4.5V
Max Collector Current 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA 3.5V
Gain 20dB
Transition Frequency 21000MHz
Max Breakdown Voltage 5V
Collector Base Voltage (VCBO) 10V
Emitter Base Voltage (VEBO) 1V
Noise Figure (dB Typ @ f) 0.9dB ~ 1.4dB @ 1.8GHz
RoHS Status RoHS Compliant

BFP540FESDE6327 Документы

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