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BFP620H7764XTSA1 Технические параметры

Infineon Technologies  BFP620H7764XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Number of Pins 4Pins
Transistor Element Material SILICON GERMANIUM CARBON
Collector-Emitter Breakdown Voltage 2.8V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Additional Feature LOW NOISE
Power Rating 1W
Max Power Dissipation 185mW
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 65GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFP620
Configuration SINGLE
Power Dissipation 185mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 2.3V
Max Collector Current 80mA
Max Repetitive Reverse Voltage (Vrrm) 15V
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 50mA 1.5V
Gain 21.5dB
Transition Frequency 65000MHz
Hold Current 100mA
Max Breakdown Voltage 2.8V
Collector Base Voltage (VCBO) 7.5V
Emitter Base Voltage (VEBO) 1.2V
Collector-Base Capacitance-Max 0.2pF
Noise Figure (dB Typ @ f) 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BFP620H7764XTSA1 Документы

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