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BFP640ESDH6327XTSA1 Технические параметры

Infineon Technologies  BFP640ESDH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Transistor Element Material SILICON GERMANIUM CARBON
Collector-Emitter Breakdown Voltage 4.7V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 46GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFP640
JESD-30 Code R-PDSO-G4
Configuration SINGLE
Power Dissipation 200mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4.1V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 30mA 3V
Gain 7dB ~ 30dB
Transition Frequency 45000MHz
Max Breakdown Voltage 4.7V
Collector Base Voltage (VCBO) 4.8V
Noise Figure (dB Typ @ f) 0.6dB ~ 2dB @ 150MHz ~ 10GHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BFP640ESDH6327XTSA1 Документы

BFP640ESDH6327XTSA1 brand manufacturers: Infineon Technologies, Anli stock, BFP640ESDH6327XTSA1 reference price.Infineon Technologies. BFP640ESDH6327XTSA1 parameters, BFP640ESDH6327XTSA1 Datasheet PDF and pin diagram description download.You can use the BFP640ESDH6327XTSA1 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFP640ESDH6327XTSA1 pin diagram and circuit diagram and usage method of function,BFP640ESDH6327XTSA1 electronics tutorials.You can download from the Anli.