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BFP640FH6327XTSA1 Технические параметры

Infineon Technologies  BFP640FH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-SMD, Flat Leads
Number of Pins 4Pins
Transistor Element Material SILICON GERMANIUM
Collector-Emitter Breakdown Voltage 4.5V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Additional Feature LOW NOISE, HIGH RELIABILITY
Max Power Dissipation 200mW
Terminal Position DUAL
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 40GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFP640
Configuration SINGLE
Power Dissipation 200mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 30mA 3V
Gain 23dB
Transition Frequency 40000MHz
Max Breakdown Voltage 4.5V
Collector Base Voltage (VCBO) 13V
Emitter Base Voltage (VEBO) 1.2V
Collector-Base Capacitance-Max 0.2pF
Noise Figure (dB Typ @ f) 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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