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Infineon Technologies BFP650E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ||
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-82A, SOT-343 | |
| Transistor Element Material | SILICON GERMANIUM | |
| Collector-Emitter Breakdown Voltage | 4.5V | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2011 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| Additional Feature | HIGH RELIABILITY, LOW NOISE | |
| Max Power Dissipation | 500mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | BFP650 | |
| JESD-30 Code | R-PDSO-G4 | |
| Configuration | SINGLE | |
| Case Connection | EMITTER | |
| Power - Max | 500mW | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Max Collector Current | 150mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 80mA 3V | |
| Gain | 10.5dB ~ 21.5dB | |
| Transition Frequency | 37000MHz | |
| Max Breakdown Voltage | 4.5V | |
| Frequency - Transition | 37GHz | |
| Highest Frequency Band | C B | |
| Collector-Base Capacitance-Max | 0.4pF | |
| Noise Figure (dB Typ @ f) | 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz | |
| RoHS Status | RoHS Compliant |