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BFP650E6327HTSA1 Технические параметры

Infineon Technologies  BFP650E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Transistor Element Material SILICON GERMANIUM
Collector-Emitter Breakdown Voltage 4.5V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
Additional Feature HIGH RELIABILITY, LOW NOISE
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Base Part Number BFP650
JESD-30 Code R-PDSO-G4
Configuration SINGLE
Case Connection EMITTER
Power - Max 500mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 80mA 3V
Gain 10.5dB ~ 21.5dB
Transition Frequency 37000MHz
Max Breakdown Voltage 4.5V
Frequency - Transition 37GHz
Highest Frequency Band C B
Collector-Base Capacitance-Max 0.4pF
Noise Figure (dB Typ @ f) 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
RoHS Status RoHS Compliant

BFP650E6327HTSA1 Документы

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