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Infineon Technologies BFP650FH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - Bipolar (BJT) - RF | |
Марка | ||
Factory Lead Time | 8 Weeks | |
Contact Plating | Tin | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | 4-SMD, Flat Leads | |
Number of Pins | 4Pins | |
Collector-Emitter Breakdown Voltage | 4.5V | |
Number of Elements | 1 Element | |
Operating Temperature | 150°C TJ | |
Packaging | Tape & Reel (TR) | |
Published | 2003 | |
JESD-609 Code | e3 | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
ECCN Code | EAR99 | |
Max Power Dissipation | 500mW |
Свойство продукта | Значение свойства | |
---|---|---|
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Frequency | 42GHz | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Base Part Number | BFP650 | |
Power Dissipation | 500mW | |
Halogen Free | Halogen Free | |
Transistor Type | NPN | |
Collector Emitter Voltage (VCEO) | 4V | |
Max Collector Current | 150mA | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 80mA 3V | |
Gain | 11dB ~ 21.5dB | |
Max Breakdown Voltage | 4.5V | |
Collector Base Voltage (VCBO) | 13V | |
Emitter Base Voltage (VEBO) | 1.2V | |
Noise Figure (dB Typ @ f) | 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |