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BFP650H6327XTSA1 Технические параметры

Infineon Technologies  BFP650H6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Number of Pins 4Pins
Transistor Element Material SILICON GERMANIUM CARBON
Collector-Emitter Breakdown Voltage 4.5V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Additional Feature LOW NOISE
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Frequency 41GHz
Base Part Number BFP650
Element Configuration Single
Power Dissipation 500mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 80mA 3V
Gain 10.5dB ~ 21.5dB
Transition Frequency 42000MHz
Max Breakdown Voltage 4.5V
Frequency - Transition 37GHz
Collector Base Voltage (VCBO) 13V
Emitter Base Voltage (VEBO) 1.2V
Noise Figure (dB Typ @ f) 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Height 900μm
Length 2mm
Width 1.25mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства
BFP650H6327XTSA1 brand manufacturers: Infineon Technologies, Anli stock, BFP650H6327XTSA1 reference price.Infineon Technologies. BFP650H6327XTSA1 parameters, BFP650H6327XTSA1 Datasheet PDF and pin diagram description download.You can use the BFP650H6327XTSA1 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFP650H6327XTSA1 pin diagram and circuit diagram and usage method of function,BFP650H6327XTSA1 electronics tutorials.You can download from the Anli.